ST Wafer(Power Semiconductor Substrate)
Product Information
[ST wafer] is a single crystalized wafer that improved mechanical strength by doping B and Ge during the manufacturing process.
The characteristics are strong anti-heat shock in high-temperature process and exemplary performance in reducing slips and warp value for hetero-epitaxial growth such as GaN.
Product Specification
- Diameter : 4,5,6 inch
- Dopant : B-Ge (P type)
- Crystal Orientation : <111>
- Resistivity : ≤0.02 Ohm-cm
Main Application
- GaN-on-Si (Power Semiconductor Substrate)
Strength Evaluation
Heat Shock Test
【Condition】 1100℃×1h(wet O2)、5 cycles 【Evaluation Items】Slip, Warpage
Slip length, and Warp value
Comparing light doped/heavy doped and ST wafer, ST wafer is rigid from heat shock.
Please ASK for customization.